SiO_2掺杂浓度对ZnO压敏陶瓷结构与性能的影响
详细信息    查看全文 | 推荐本文 |
  • 英文篇名:Effect of SiO_2 Doping Concentrations on the Microstructure and Properties of ZnO-based Varistor Ceramics
  • 作者:陈永佳 ; 刘建科
  • 英文作者:CHEN Yongjia;LIU Jianke;Shaanxi Institute of Technology;School of Arts and Sciences, Shaanxi University of Science and Technology;
  • 关键词:ZnO压敏陶瓷 ; SiO_2掺杂 ; 微观结构 ; 电学性能 ; 烧结机理
  • 英文关键词:ZnO varistor ceramics;;SiO_2 doping;;microstructure;;electrical properties;;sintering mechanism
  • 中文刊名:CLDB
  • 英文刊名:Materials Reports
  • 机构:陕西国防工业职业技术学院;陕西科技大学文理学院;
  • 出版日期:2019-05-25
  • 出版单位:材料导报
  • 年:2019
  • 期:v.33
  • 基金:陕西省教育厅2018年度专项科学研究计划项目(18JK0068)~~
  • 语种:中文;
  • 页:CLDB2019S1034
  • 页数:4
  • CN:S1
  • ISSN:50-1078/TB
  • 分类号:170-173
摘要
以(96.0-x)ZnO-2.0Pr_6O_(11)-0.5Sb_2O_3-0.5Co_2O_3-0.5Cr_2O_3-0.5Y_2O_3-xSiO_2为配方制备压敏电阻陶瓷,其中比例均为物质的量比,x分别为0.0%、0.8%、1.6%、2.4%。研究了SiO_2的掺杂浓度对该体系压敏电阻陶瓷微观结构和电学性能的影响。研究表明,压敏电阻陶瓷的主晶相为六方纤锌矿型结构,同时还含有SbYO_3、ZnCr_2O_4、ZnCo_2O_4、Zn_7SbO_(12)、Zn_2SiO_4和Pr_2O_3等晶相。随着SiO_2掺杂浓度的增大,ZnO压敏陶瓷的三个强衍射峰逐渐向低角度方向偏移,平均晶粒尺寸先减小后增大。当掺杂浓度为1.6%时,平均晶粒尺寸达到最小值(1.5μm),击穿场强E_(1mA)达到最大值(385.6 V/mm),非线性系数α达到最大值(84.2),漏电流I_L达到最小值(1.1μA)。通过分析烧结机理、固溶体形成机理以及能量最低原理,本工作对以上现象进行了理论解释。
        The influences of SiO_2 doping concentrations on the microstructures and electrical properties of(96.0-x)ZnO-2.0 Pr_6O_(11)-0.5 Sb_2O_3-0.5 Co_2O_3-0.5 Cr_2O_3-0.5 Y_2O_3-xSiO_2 system varistor ceramics had been researched in detail, wherein x was 0.0%, 0.8%, 1.6%, 2.4% respectively, and all the proportion were as molar presents. The results showed that the lattice structure of the main crystal phase was hexagonal wurtzite structure. With the increase of SiO_2 concentrations, the three strong diffraction peaks of ZnO varistor ceramics moved to lower angles gradually, the average grain size decreased at first and then increased. As the SiO_2 concentration was 1.6%, the following results were obtained: The average grain size reached the minimum value of 1.5 μm; the breakdown field strength E_(1 mA) was 385.6 V/mm and nonlinear coefficient α reached the maximum value of 84.2; the leakage current I_L reached the minimum value of 1.1 μA. The above phenomena were explained systematically by analyzing the sintering mechanism, formation mechanism of solid solution and principle of lowest energy.
引文
1王振林,李盛涛.氧化锌压敏陶瓷制造及应用,科学出版社,2009.
    2 Nahm C W. Transaction of Nonferrous Metals Society of China,2015,25(1),1176.
    3 Bai H R. Ceramics International,2016,42(10),547.
    4 Hembram K. Journal of the European Ceramic Society,2015,35(1),35.
    5 刘建科,陈永佳.功能材料,2016,47(8),205.
    6 Xu Z,Bai H R. Ceramics International,2016,42(14),350.
    7 Ramirez M A,Femandez J F. Journal of Material Science,2014,21(2),523.
    8 刘建科,王秀峰,陈永佳.功能材料,2013,44(S2),316.
    9 Nahm C W. Journal of Comparative Physiology A-Neuroethology Sensory Neural and Behavioral Physiology,2013,57(8),132.
    10 Liu J K,Chen Y J,Cui Y H,et al. Journal of Material Science:Materials in Electronics,2017,28(2),2015.
    11 杨小妮,傅刚,陈环.电子元件与材料,2012,32(1),20.
    12 Tang M,Mi Z,Zhang J. Acta Physico-Chimica Sinica,2005,21(10),1122.
    13 Krishna T. Materials Letters,2009,63(2),242.
    14 刘建科,陈永佳.硅酸盐学报,2016,44(12),1736.
    15 Khar F,Savary E. Ceramics International,2016,40(13),697.
    16 胡志强.材料科学基础,化学工业出版社,2003.