摘要
以(96.0-x)ZnO-2.0Pr_6O_(11)-0.5Sb_2O_3-0.5Co_2O_3-0.5Cr_2O_3-0.5Y_2O_3-xSiO_2为配方制备压敏电阻陶瓷,其中比例均为物质的量比,x分别为0.0%、0.8%、1.6%、2.4%。研究了SiO_2的掺杂浓度对该体系压敏电阻陶瓷微观结构和电学性能的影响。研究表明,压敏电阻陶瓷的主晶相为六方纤锌矿型结构,同时还含有SbYO_3、ZnCr_2O_4、ZnCo_2O_4、Zn_7SbO_(12)、Zn_2SiO_4和Pr_2O_3等晶相。随着SiO_2掺杂浓度的增大,ZnO压敏陶瓷的三个强衍射峰逐渐向低角度方向偏移,平均晶粒尺寸先减小后增大。当掺杂浓度为1.6%时,平均晶粒尺寸达到最小值(1.5μm),击穿场强E_(1mA)达到最大值(385.6 V/mm),非线性系数α达到最大值(84.2),漏电流I_L达到最小值(1.1μA)。通过分析烧结机理、固溶体形成机理以及能量最低原理,本工作对以上现象进行了理论解释。
The influences of SiO_2 doping concentrations on the microstructures and electrical properties of(96.0-x)ZnO-2.0 Pr_6O_(11)-0.5 Sb_2O_3-0.5 Co_2O_3-0.5 Cr_2O_3-0.5 Y_2O_3-xSiO_2 system varistor ceramics had been researched in detail, wherein x was 0.0%, 0.8%, 1.6%, 2.4% respectively, and all the proportion were as molar presents. The results showed that the lattice structure of the main crystal phase was hexagonal wurtzite structure. With the increase of SiO_2 concentrations, the three strong diffraction peaks of ZnO varistor ceramics moved to lower angles gradually, the average grain size decreased at first and then increased. As the SiO_2 concentration was 1.6%, the following results were obtained: The average grain size reached the minimum value of 1.5 μm; the breakdown field strength E_(1 mA) was 385.6 V/mm and nonlinear coefficient α reached the maximum value of 84.2; the leakage current I_L reached the minimum value of 1.1 μA. The above phenomena were explained systematically by analyzing the sintering mechanism, formation mechanism of solid solution and principle of lowest energy.
引文
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