小型化可调谐外腔面发射绿光激光器
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摘要
以InGaAs多量子阱为有源区材料,以对抽运光透明的AlGaAs/AlAs为后端分布布拉格反射镜材料,采用后端抽运方式,在腔内插入标准具作为滤波元件,通过腔内倍频,获得小型化可调谐的光抽运外腔面发射绿光激光器。作为滤波元件,标准具可压窄基频光的光谱半峰全宽。为了阻止倍频光返回到增益芯片,标准具镀有倍频光高反膜。激光器的基频光调谐范围超过10 nm,倍频绿光在中心波长559 nm处的调谐范围为4 nm,光谱半峰全宽为1.0 nm,最大输出功率为65 mW。
By the use of a semiconductor gain chip with InGaAs multiple quantum wells as materials in the active region and the AlGaAs/AlAs, transparent to the pump light, as distributed Bragg reflectors, along with the end-pump geometry to simplify the device structure and an inserted etalon as the tuning element, an optically-pumped compact tunable external-cavity surface-emitting green laser is realized by the intra-cavity frequency doubling technology. The employed etalon narrows the laser linewidth as a tuning element. To prevent the second harmonic from returning to the gain chip, the etalon is coated with a high-reflectivity film at the wavelength of the second harmonic. The tuning range of the fundamental wave is over 10 nm and that of the second harmonic is 4 nm centering at 559 nm. The spectral linewidth of the second harmonic is 1.0 nm and the maximum output power is 65 mW.
By the use of a semiconductor gain chip with InGaAs multiple quantum wells as materials in the active region and the AlGaAs/AlAs, transparent to the pump light, as distributed Bragg reflectors, along with the end-pump geometry to simplify the device structure and an inserted etalon as the tuning element, an optically-pumped compact tunable external-cavity surface-emitting green laser is realized by the intra-cavity frequency doubling technology. The employed etalon narrows the laser linewidth as a tuning element. To prevent the second harmonic from returning to the gain chip, the etalon is coated with a high-reflectivity film at the wavelength of the second harmonic. The tuning range of the fundamental wave is over 10 nm and that of the second harmonic is 4 nm centering at 559 nm. The spectral linewidth of the second harmonic is 1.0 nm and the maximum output power is 65 mW.
引文
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[27] Jewell J L,Harbison J P,Scherer A,et al.Vertical-cavity surface-emitting lasers:design,growth,fabrication,characterization[J].IEEE Journal of Quantum Electronics,1991,27(6):1332-1346.
[28] Tropper A C,Hoogland S.Extended cavity surface-emitting semiconductor lasers[J].Progress in Quantum Electronics,2006,30(1):1-43.
[29] Fan L,Hsu T C,Fallahi M,et al.Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling[J].Applied Physics Letters,2006,88(25):251117.
[30] Jiang L D,Zhang X H,Zhan X H,et al.Progress in frequency-doubled external-cavity surface-emitting lasers[J].Laser & Optoelectronics Progress,2016,53(9):090001.蒋丽丹,张晓华,詹小红,等.倍频外腔面发射激光器研究进展[J].激光与光电子学进展,2016,53(9):090001.
[2] Albrecht H E,Borys M,Damaschke N,et al.Laser doppler and phase doppler measurement techniques[M].Heidelberg:Springer Berlin Heidelberg,2003.
[3] Simbuerger E,Pflanz T,Masters A.Confocal microscopy:new lasers enhance live cell imaging[J].Physik Journal (Physics Best),2008:10-13.
[4] Chellappan K V,Erden E,Urey H.Laser-based displays a review[J].Applied optics,2010,49(25):F79-F98.
[5] Yuan L G,Jiang D S,Wang J J,et al.Green solid-state laser with 230 W output power[J].Infrared and Laser Engineering,2008,37(6):980-983.苑利钢,姜东升,王建军,等.输出功率达230 W的绿光固体激光器[J].红外与激光工程,2008,37(6):980-983.
[6] Huang Z M,Ren Z Y,Bai J T.200 W quasi-continuous-wave green laser with a dual-resonator combined cavity[J].Acta Photonica Sinica,2009,38(6):1331-1335.黄智蒙,任兆玉,白晋涛.200 W双谐振腔组合单向输出准连续绿光激光器[J].光子学报,2009,38(6):1331-1335.
[7] Dudley D R,Mehl O,Wang G Y,et al.Q-switched diode-pumped Nd∶YAG rod laser with output power of 420 W at 532 nm and 160 W at 355 nm[J].Proceedings of SPIE,2009,7193:71930Z.
[8] Fedorova A,Sokolovskii S,Battle R,et al.Green-to-red tunable SHG of a quantum-dot laser in a PPKTP waveguide[J].Laser Physics Letters,2012,9(11):790-795.
[9] Jechow A,Menzel R,Paschke K,et al.Blue-green light generation using high brilliance edge emitting diode lasers[J].Laser & Photonics Reviews,2010,4(5):633-655.
[10] Fedorova K A,Battle P R,Livshits D A,et al.517 nm-538 nm tunable second harmonic generation in a diode-pumped PPKTP waveguide crystal[J].Proceedings of SPIE,2015,9347:93470D.
[11] Kuznetsov M,Hakimi F,Sprague R,et al.High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams[J].IEEE Photonics Technology Letters,1997,9(8):1063-1065.
[12] Rahimi-Iman A.Recent advances in VECSELs[J].Journal of Optics,2016,18(9):093003.
[13] Guina M,Rantam?ki A,H?rk?nen A.Optically pumped VECSELs:review of technology and progress[J].Journal of Physics D,2017,50(38):383001.
[14] Keller U,Tropper A C.Passively modelocked surface-emitting semiconductor lasers[J].Physics Reports,2006,429(2):67-120.
[15] MacLean A J,Kemp A J,Calvez S,et al.Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader[J].IEEE Journal of Quantum Electronics,2008,44(3):216-225.
[16] Laurain A,Myara M,Beaudoin G,et al.High power single-frequency continuously-tunable compact extended-cavity semiconductor laser[J].Optics Express,2009,17(12):9503-9508.
[17] Esposito E,Keatings S,Gardner K,et al.Confocal laser scanning microscopy using a frequency doubled vertical external cavity surface emitting laser[J].Review of Scientific Instruments,2008,79(8):083702.
[18] Kantola E,Rantamaki A,Leino I,et al.VECSEL-based 590-nm laser system with 8 W of output power for the treatment of vascular lesions[J].IEEE Journal of Selected Topics in Quantum Electronics,2018,25(1):7202108.
[19] Blin S,Paquet R,Myara M,et al.Coherent and tunable THz emission driven by an integrated III-V semiconductor laser[J].IEEE Journal of Selected Topics in Quantum Electronics,2017,23(4):1-11.
[20] Schulze M,Masters A.Optically pumped semiconductor lasers expand the scope of potential applications[J].Laser Focus World,2006,42(12):77-79.
[21] Calvez S,Hastie J E,Guina M,et al.Semiconductor disk lasers for the generation of visible and ultraviolet radiation[J].Laser & Photonics Review,2009,3(5):407-434.
[22] Steegmüller U,Kühnelt M,Unold H,et al.Green laser modules to fit laser projection out of your pocket[J].Proceedings of SPIE,2008,6871:687117.
[23] Fan L,Fallahi M,Murray J T,et al.Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers[J].Applied Physics Letters,2006,88(2):021105.
[24] Lee J H,Lee S M,Kim T,et al.7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser[J].Applied physics letters,2006,89(24):241107.
[25] Chilla J,Shu Q Z,Zhou H,et al.Recent advances in optically pumped semiconductor lasers[J].Proceedings of SPIE,2007,6451:645109.
[26] Hein A,Menzel S,Unger P.High-power high-efficiency optically pumped semiconductor disk lasers in the green spectral region with a broad tuning range[J].Applied Physics Letters,2012,101(11):111109.
[27] Jewell J L,Harbison J P,Scherer A,et al.Vertical-cavity surface-emitting lasers:design,growth,fabrication,characterization[J].IEEE Journal of Quantum Electronics,1991,27(6):1332-1346.
[28] Tropper A C,Hoogland S.Extended cavity surface-emitting semiconductor lasers[J].Progress in Quantum Electronics,2006,30(1):1-43.
[29] Fan L,Hsu T C,Fallahi M,et al.Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling[J].Applied Physics Letters,2006,88(25):251117.
[30] Jiang L D,Zhang X H,Zhan X H,et al.Progress in frequency-doubled external-cavity surface-emitting lasers[J].Laser & Optoelectronics Progress,2016,53(9):090001.蒋丽丹,张晓华,詹小红,等.倍频外腔面发射激光器研究进展[J].激光与光电子学进展,2016,53(9):090001.