硬质合金刀具材料化学机械抛光机理研究
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摘要
目的研究硬质合金刀具材料化学机械抛光(CMP)机理,为改善硬质合金刀具表面质量提供理论支持。方法分析硬质合金刀具材料在酸性抛光液中的化学反应,研究硬质合金刀具材料CMP的化学反应机理。基于接触力学理论计算抛光垫与工件的实际接触面积和单个磨粒的实际切削面积,在运动学分析的基础上,建立硬质合金刀具材料CMP的材料去除率模型,通过实验验证材料去除率模型的有效性。结果在酸性抛光液中,硬质合金被氧化成Co_3O_4。当工件、抛光垫、磨粒类型、工件安装位置确定时,材料去除率与抛光载荷、磨粒浓度和抛光盘转速有关。常用硬质合金抛光条件下,抛光YG8刀具的修正系数Kcm为8.53,抛光后刀具的最低表面粗糙度能达到48nm,材料去除率为62.381nm/min,材料去除率的理论值和实验值的最大相对误差为13.25%,消除了表面缺陷,获得了较好的镜面效果。结论建立的材料去除率模型具有一定的有效性,对硬质合金刀具材料进行化学机械抛光能消除刀具的表面缺陷,改善表面质量。
The work aims to study the chemical and mechanical polishing(CMP) mechanism of cemented carbide tool ma-terial, so as to provide theoretical support for improving the surface quality of cemented carbide tool. The chemical reaction ofcemented carbide tool material in acid polishing solution was analyzed and the chemical reaction mechanism of cemented car-bide tool material CMP was studied. The actual contact area between polishing pad and workpiece and the actual cutting area ofa single abrasive particle were calculated based on contact mechanics theory, the material removal rate model of cemented car-bide tool material CMP was established on the basis of kinematics analysis, and the effectiveness of the material removal ratemodel was verified by experiments. In acid polishing solution, cemented carbide tool was oxidized to Co3 O4. When the work-piece, polishing pad, abrasive particle type and installation position were determined, the material removal rate was related topolishing load, abrasive particle concentration and polishing disc speed. The correction coefficient Kcmwas 8.53 for the YG8 tools CMP under common cemented carbide polishing conditions, and the lowest surface roughness of the polished tools couldreach 48 nm. At this time, the material removal rate was 62.381 nm/min and the maximum relative error between the theoreticalvalue and the experimental value of material removal rate was 13.25%. Thus, surface defects were eliminated and good mirroreffect was obtained. The material removal rate model is effective certainly, and CMP of cemented carbide tool material caneliminate the surface defects of the tool and improve surface quality.
The work aims to study the chemical and mechanical polishing(CMP) mechanism of cemented carbide tool ma-terial, so as to provide theoretical support for improving the surface quality of cemented carbide tool. The chemical reaction ofcemented carbide tool material in acid polishing solution was analyzed and the chemical reaction mechanism of cemented car-bide tool material CMP was studied. The actual contact area between polishing pad and workpiece and the actual cutting area ofa single abrasive particle were calculated based on contact mechanics theory, the material removal rate model of cemented car-bide tool material CMP was established on the basis of kinematics analysis, and the effectiveness of the material removal ratemodel was verified by experiments. In acid polishing solution, cemented carbide tool was oxidized to Co3 O4. When the work-piece, polishing pad, abrasive particle type and installation position were determined, the material removal rate was related topolishing load, abrasive particle concentration and polishing disc speed. The correction coefficient Kcmwas 8.53 for the YG8 tools CMP under common cemented carbide polishing conditions, and the lowest surface roughness of the polished tools couldreach 48 nm. At this time, the material removal rate was 62.381 nm/min and the maximum relative error between the theoreticalvalue and the experimental value of material removal rate was 13.25%. Thus, surface defects were eliminated and good mirroreffect was obtained. The material removal rate model is effective certainly, and CMP of cemented carbide tool material caneliminate the surface defects of the tool and improve surface quality.
引文
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[13]李宁,龙坚战,周永贵,等.超细WC-Co硬质合金的组织与性能特征[J].硬质合金,2005,22(2):107-111.LI Ning,LONG Jian-zhan,ZHOU Yong-gui,et al.Structure and performance features of ultra-fine WC-Co cemented carbides[J].Cemented carbide,2005,22(2):107-111.
[14]布尚B.摩擦学导论[M].葛世荣译.北京:机械工业出版社,2007.BHUSHAN B.Introduction to tribology[M].GE Shi-rong translated.Beijing:China Machine Press,2007.
[15]GREENWOOD J A,WILLIAMSON J B P.Contact of nominally flat surface[J].Proceedings of the royal society of London,1996,295(1442):300-319.
[16]ZHAO D,HE Y,WANG T,et al.Effect of kinematic parameters and their coupling relationships on global uniformity of chemical-mechanical polishing[J].IEEE transactions on semiconductor manufacturing,2012,25(3):502-510.
[17]ZHAO Y,CHANG L.A micro-contact and wear model for chemical-mechanical polishing of silicon wafers[J].Wear,2002,252(3):220-226.
[18]苏建修.IC制造中硅片化学机械抛光材料去除机理研究[D].大连:大连理工大学,2006.SU Jian-xiu.Study on material removal mechanism of wafer chemical mechanical polishing in IC manufacturing[D].Dalian:Dalian University of Technology,2006.
[2]UHLMANN E,REIMERS W,BYRNE F,et al.Analysis of tool wear and residual stress of CVD diamond coated cemented carbide tools in the machining of aluminum silicon alloys[J].Production engineering,2010,4(2-3):203-209.
[3]陈明,安庆龙,刘志强.高速切削技术基础与应用[M].上海:上海科学技术出版社,2012.CHEN Ming,AN Qing-long,LIU Zhi-qiang.Foundation and application of high speed cutting technology[M].Shanghai:Shanghai Science and Technology Press,2012.
[4]袁巨龙,张飞虎,戴一帆,等.超精密加工领域科学技术发展研究[J].机械工程学报,2010,46(15):161-177.YUAN Ju-long,ZHANG Fei-hu,DAI Yi-fan,et al.Development research of science and technologies in ultraprecision machining field[J].Journal of mechanical engineering,2010,46(15):161-177.
[5]LI M,LYU B H,YUAN J L,et al.Evolution and equivalent control law of surface roughness in shear-thickening polishing[J].International journal of machine tools&manufacture,2016,108:113-126.
[6]李敏,袁巨龙,吴喆,等.复杂曲面零件超精密加工方法的研究进展[J].机械工程学报,2015(5):178-191.LI Min,YUAN Ju-long,WU Zhe,et al.Progress in ultraprecision machining methods of complex curved parts[J].Journal of mechanical engineering,2015(5):178-191.
[7]李敏,袁巨龙,吕冰海,等.Si3N4陶瓷的剪切增稠抛光[J].机械工程学报,2017,53(9):193-200.LI Min,YUAN Ju-long,LYU Bing-hai,et al.Shearthickening polishing of Si3N4 ceramics[J].Journal of mechanical engineering,2017,53(9):193-200.
[8]潘旸.CMP抛光硬质合金刀片的切削性能试验研究[D].湘潭:湘潭大学,2015.PAN Yang.Experimental study on the cutting performance of CMP polished cemented carbide blade[D].Xiangtan:Xiangtan University,2015.
[9]LI M,LYU B H,YUAN J L,et al.Shear-thickening polishing method[J].International journal of machine tools&manufacture,2015,94:88-99.
[10]毛美姣,吴锋,胡自化.抛光垫特性对硬质合金刀片CMP加工效果的影响[J].表面技术,2017,46(12):270-276.MAO Mei-jiao,WU Feng,HU Zi-hua.Effects of polishing pad characteristics on CMP(chemical mechanical polishing)result of cemented carbide tool[J].Surface technology,2017,46(12):270-276.
[11]彭姣.硬质合金刀片CMP抛光机理及工艺参数决策研究[D].湘潭:湘潭大学,2014.PENG Jiao.Study on the polishing mechanism and process parameter decision of CMP polished cemented carbide blade[D].Xiangtan:Xiangtan University,2014.
[12]FORSBERG M.Effect of process parameters on material removal rate in chemical mechanical polishing of Si(100)[J].Microelectronic engineering,2005,77(3):319-326.
[13]李宁,龙坚战,周永贵,等.超细WC-Co硬质合金的组织与性能特征[J].硬质合金,2005,22(2):107-111.LI Ning,LONG Jian-zhan,ZHOU Yong-gui,et al.Structure and performance features of ultra-fine WC-Co cemented carbides[J].Cemented carbide,2005,22(2):107-111.
[14]布尚B.摩擦学导论[M].葛世荣译.北京:机械工业出版社,2007.BHUSHAN B.Introduction to tribology[M].GE Shi-rong translated.Beijing:China Machine Press,2007.
[15]GREENWOOD J A,WILLIAMSON J B P.Contact of nominally flat surface[J].Proceedings of the royal society of London,1996,295(1442):300-319.
[16]ZHAO D,HE Y,WANG T,et al.Effect of kinematic parameters and their coupling relationships on global uniformity of chemical-mechanical polishing[J].IEEE transactions on semiconductor manufacturing,2012,25(3):502-510.
[17]ZHAO Y,CHANG L.A micro-contact and wear model for chemical-mechanical polishing of silicon wafers[J].Wear,2002,252(3):220-226.
[18]苏建修.IC制造中硅片化学机械抛光材料去除机理研究[D].大连:大连理工大学,2006.SU Jian-xiu.Study on material removal mechanism of wafer chemical mechanical polishing in IC manufacturing[D].Dalian:Dalian University of Technology,2006.