电注入退火对多晶硅PERC太阳电池性能的影响
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摘要
对掺镓和掺硼的二种多晶硅钝化发射极和背面电池进行了电注入退火研究,分别用Halm电学性能测试仪和量子效率测试仪分析了它们在不同条件处理后的电学性能和外量子效率变化.结果表明,以8.0A的注入电流在260℃的温度下处理2h,有利于促进电池由衰减态向再生态转变,电注入退火后电池的转换效率增加了0.83%,在光照5h后比初始值仅衰减了0.61%.电注入退火能有效降低多晶硅钝化发射极和背面电池的光致衰减效应,掺镓多晶硅钝化发射极和背面电池具有更低的光致衰减效应,相比掺硼多晶硅钝化发射极和背面电池光致衰减值降低了约50%.
Electrical injection annealing effect was performed in gallium-doped and boron-doped multicrystalline silicon Passivated Emitter And Rear Cells(PERC).The electrical properties and the external quantum efficiency of the solar cells with different treatments were measured by the Halm electrical performance tester and quantum efficiency tester respectively.The results show that the treatment with8.0 Aelectric injection current at 260℃for 2 his beneficial to promote the transition from degradation to regeneration.The conversion efficiency is enhanced by 0.83% after electric injection annealing,and the degradation of its conversion efficiency is only 0.61% from virgin value after illumination for 5 h.The light induced degradation of multi-crystalline silicon PERC colud be reduced by electrical injection annealing,and the gallium-doped multi-crystalline silicon PERC solar cell has lower light induced degradation,which is reduced by about 50% compared with that in boron-doped multi-crystalline silicon PERC solar cell.
Electrical injection annealing effect was performed in gallium-doped and boron-doped multicrystalline silicon Passivated Emitter And Rear Cells(PERC).The electrical properties and the external quantum efficiency of the solar cells with different treatments were measured by the Halm electrical performance tester and quantum efficiency tester respectively.The results show that the treatment with8.0 Aelectric injection current at 260℃for 2 his beneficial to promote the transition from degradation to regeneration.The conversion efficiency is enhanced by 0.83% after electric injection annealing,and the degradation of its conversion efficiency is only 0.61% from virgin value after illumination for 5 h.The light induced degradation of multi-crystalline silicon PERC colud be reduced by electrical injection annealing,and the gallium-doped multi-crystalline silicon PERC solar cell has lower light induced degradation,which is reduced by about 50% compared with that in boron-doped multi-crystalline silicon PERC solar cell.
引文
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[17] CHKRABORTY S,HUANG Y,WILSON M,et al.Mitigating light and elevated temperature induced degradation in multicrystalline silicon wafers and PERC solar cells using phosphorus diffusion gettering[J].Physica Status Solidi A,2018,215(13):1800160.
[18] HAMER P,CHAN C,BONILLA R S,et al.Hydrogen induced contact resistance in PERC solar cells[J].Solar Energy Materials and Solar Cells,2018,184:91-97.
[19] FUNG T H,CHAN C E,HALLAM B J,et al.Impact of annealing on the formation and mitigation of carrier-induced defects in multi-crystalline silicon[J].Energy Procedia,2017,124:726-733
[20] HERGUTH A,DERRICKS C,KELLER P,et al.Recovery of LeTID by low intensity illumination:reaction kinetics,completeness and threshold temperature[J].Energy Procedia,2017,124:740-744.
[21] LUKA T,TEUEK M,GROBER S,et al.Microstructural identification of Cu in solar cells sensitive to light-induced degradation[J].Physica Status Solidi,2017,11(2):1600426.
[2] JENSEN M A,MORISHIGE A E,HOFSTETTER J,et al.Evolution of LeTID defects in p-type multicrystalline silicon during degradation and regeneration[J].IEEE Journal of Photovoltaics,2017,7(4):980-987.
[3] ZUSCHLAG A,SKORKA D,HAHN G.Degradation and regeneration analysis in mc-Si[C].IEEE Photovoltaic Specialists Conference(PVSC),2016:1051-1054.
[4] PADMANABHAN M,JHAVERI K,SHARMA R,et al.Light-induced degradation and regeneration of multicrystalline silicon Al‐BSF and PERC solar cells[J].Physica Status Solidi,2016,10(12):874-881.
[5] NAMPALLI N,LI H,KIM M,et al.Multiple pathways for permanent deactivation of boron-oxygen defects in p-type silicon[J].Solar Energy Materials and Solar Cells,2017,173:12-17.
[6] ZHANG San-yang,SHEN Hong-lie,WEI Qing-zhu,et al.Investigation on supression of light induced degradation effect in crystalline silicon solar cells with gallium doping[J].Journal of Synthetic Crystals,2016,45(4):1100-1105张三洋,沈鸿烈,魏青竹,等.晶硅掺镓抑制太阳电池光致衰减效应的研究[J].人工晶体学报,2016,45(4):1100-1105.
[7] KERSTEN F,ENGELHART P,PLOIGT H C,et al.A new mc-Si degradation effect called LeTID[C].IEEE Photovoltaic Specialist Conference,2015:1-5.
[8] BREDEMEIER D,WALTER D,SCHMIDT J.Light-induced lifetime degradation in high-performance multicrystalline silicon:detailed kinetics of the defect activation[J].Solar Energy Materials and Solar Cells,2017,173:2-5.
[9] KRAUSS K,FERTIG F,MENZEL D,et al.Light-induced degradation of silicon solar cells with aluminiumoxide passivated rear side[J].Energy Procedia,2015,77:599-606.
[10] NIEWELT T,SCHINDLER F,KWAPIL W,et al.Understanding the light-induced degradation at elevated temperatures:Similarities between multicrystalline and floatzone p-type silicon[J].Progress in Photovoltaics:Research and Applications,2018,26(8):533-542.
[11] KOSKI Y,MARKO,et al.Low-temperature dark anneal as pre-treatment for LeTID in multicrystalline silicon[J].Solar Energy Materials and Solar Cells,2019,192:134-139.
[12] NIEWELT T,SCHON J,WARTA W,et al.Degradation of crystalline silicon due to boron-oxygen defects[J].IEEE Journal of Photovoltaics,2017,7(1):383-398.
[13] FUNG T H,KIM M,CHEN D,et al.A four-state kinetic model for the carrier-induced degradation in multicrystalline silicon:Introducing the reservoir state[J].Solar Energy Materials and Solar Cells,2018,184:48-56.
[14] CHAN C E,PAYNE D N R,HALLAM B J,et al.Rapid stabilization of high-performance multicrystalline p-type silicon PERC cells[J].IEEE Journal of Photovoltaics,2017,6(6):1473-1479.
[15] PAYNE D N R,CHAN C E,HALLAM B J,et al.Acceleration and mitigation of carrier-induced degradation in p-type multi-crystalline silicon[J].Physica Status Solidi,2016,10(3):237-241.
[16] HALLAM B J,HAMER P G,WANG S,et al.Advanced hydrogenation of dislocation clusters and boron-oxygen defects in silicon solar cells[J].Energy Procedia,2015,77:799-809.
[17] CHKRABORTY S,HUANG Y,WILSON M,et al.Mitigating light and elevated temperature induced degradation in multicrystalline silicon wafers and PERC solar cells using phosphorus diffusion gettering[J].Physica Status Solidi A,2018,215(13):1800160.
[18] HAMER P,CHAN C,BONILLA R S,et al.Hydrogen induced contact resistance in PERC solar cells[J].Solar Energy Materials and Solar Cells,2018,184:91-97.
[19] FUNG T H,CHAN C E,HALLAM B J,et al.Impact of annealing on the formation and mitigation of carrier-induced defects in multi-crystalline silicon[J].Energy Procedia,2017,124:726-733
[20] HERGUTH A,DERRICKS C,KELLER P,et al.Recovery of LeTID by low intensity illumination:reaction kinetics,completeness and threshold temperature[J].Energy Procedia,2017,124:740-744.
[21] LUKA T,TEUEK M,GROBER S,et al.Microstructural identification of Cu in solar cells sensitive to light-induced degradation[J].Physica Status Solidi,2017,11(2):1600426.