摘要
门响应时间和消光比是门控光电倍增管的两个重要性能参数。介绍了将俄制CHφT5型光电倍增管改制为门控光电倍增管的设计。采用控制光电倍增管第二聚焦极的方法,设计快响应门控制电路,使门控光电倍增管具有3个量级以上的消光比,开门延迟响应时间为70 ns,光电倍增管恢复输出的时间为20 ns。光电倍增管灵敏度降低了20%。
Gating response time and cut-off ratio are two important performance parameters of gated photomultiplier.The design of gating a CHφT5 type photomultiplier,made in Russian,was discussed in this paper.The method of controlling the second focus electrode was adopted.With a high quality and fast response gating circuit,the cut-off ratio of gated photomultiplier is larger than 10~3.After turning on the gated photomultiplier,the delay time and the rise time of photomultiplier's anode output are 70 ns and 20 ns respectively.The sensitivity of photomultiplier is decreased 20%.
引文
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