快响应门控光电倍增管设计
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  • 英文篇名:High-Speed Response Gated Photomultiplier Design
  • 作者:陈钰钰 ; 张德 ; 唐登攀
  • 英文作者:CHEN Yu-yu;ZHANG De;TANG Deng-pan;Institute of Nuclear Physics and Chemistry CAEP;
  • 关键词:门控光电倍增管 ; 光耦隔离 ; 门响应特性
  • 英文关键词:gated photomultiplier;;opto-isolator;;gate response property
  • 中文刊名:HERE
  • 英文刊名:Nuclear Electronics & Detection Technology
  • 机构:中国工程物理研究院核物理与化学研究所;
  • 出版日期:2017-04-20
  • 出版单位:核电子学与探测技术
  • 年:2017
  • 期:v.37;No.257
  • 语种:中文;
  • 页:HERE201704013
  • 页数:4
  • CN:04
  • ISSN:11-2016/TL
  • 分类号:72-75
摘要
门响应时间和消光比是门控光电倍增管的两个重要性能参数。介绍了将俄制CHφT5型光电倍增管改制为门控光电倍增管的设计。采用控制光电倍增管第二聚焦极的方法,设计快响应门控制电路,使门控光电倍增管具有3个量级以上的消光比,开门延迟响应时间为70 ns,光电倍增管恢复输出的时间为20 ns。光电倍增管灵敏度降低了20%。
        Gating response time and cut-off ratio are two important performance parameters of gated photomultiplier.The design of gating a CHφT5 type photomultiplier,made in Russian,was discussed in this paper.The method of controlling the second focus electrode was adopted.With a high quality and fast response gating circuit,the cut-off ratio of gated photomultiplier is larger than 10~3.After turning on the gated photomultiplier,the delay time and the rise time of photomultiplier's anode output are 70 ns and 20 ns respectively.The sensitivity of photomultiplier is decreased 20%.
引文
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