遮阳可控性低辐射玻璃的制备及性能
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摘要
本研究通过常压CVD法在玻璃基板上分别镀制单层SnO2∶Sb(ATO)薄膜和SnO_2∶F(FTO)/ATO复合薄膜,研究单层ATO薄膜和复合薄膜对玻璃光电性能的影响。结果表明:单层ATO薄膜和复合薄膜均为四方金红石型多晶SnO_2薄膜,且结晶性能良好,结晶度高。单层ATO薄膜可明显降低玻璃的透过率,改善玻璃的导电性和遮阳性。复合薄膜相对于单层ATO薄膜,导电性、遮阳性和辐射性能均有较大的提升,薄膜电阻率、遮阳系数和辐射率随着复合薄膜膜厚的增加而逐渐降低,薄膜晶粒增大。当复合薄膜厚度为821nm时,薄膜电阻率为4.9×10~(-4)Ω·cm,遮阳系数和辐射率分别为0.50和0.06,远红外反射率达到93.9%。
Monolayer SnO_2∶Sb(ATO)film and FTO/ATO composite films were prepared via atmospheric pressure chemical vapor deposition on the glass substrate,and the effect of ATO film and FTO/ATO composite films on the photoelectric properties were studied.The results indicated that both the ATO and composite films are tetragonal rutile phase SnO_2 with good crystallinity.The ATO film could reduce the transmittance and improve the conductivity and shading performance of glass significantly.Compared with the single layer ATO film,the composite films show apparent improvement in conductivity,shading and emissivity.With the increase of composite films thickness,the resistivity,shading coefficient and emissivity decreased gradually and the grain size increased.When the thickness of composite films was 821 nm,this asprepared film had a resistivity of 4.9×10-4Ω·cm,shading coefficient and emissivity were of 0.50 and 0.06 and respectively,with a high infrared reflectivity of 93.9% were achieved.
Monolayer SnO_2∶Sb(ATO)film and FTO/ATO composite films were prepared via atmospheric pressure chemical vapor deposition on the glass substrate,and the effect of ATO film and FTO/ATO composite films on the photoelectric properties were studied.The results indicated that both the ATO and composite films are tetragonal rutile phase SnO_2 with good crystallinity.The ATO film could reduce the transmittance and improve the conductivity and shading performance of glass significantly.Compared with the single layer ATO film,the composite films show apparent improvement in conductivity,shading and emissivity.With the increase of composite films thickness,the resistivity,shading coefficient and emissivity decreased gradually and the grain size increased.When the thickness of composite films was 821 nm,this asprepared film had a resistivity of 4.9×10-4Ω·cm,shading coefficient and emissivity were of 0.50 and 0.06 and respectively,with a high infrared reflectivity of 93.9% were achieved.
引文
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[13]E.J.J.Martin,M.Yan,M.Lane,et al.Properties of Multilayer Transparent Conducting Oxide Films[J].Thin Solid Films,2004,461(2):309~315.
[2]邹鹏伟.浅谈公共建筑玻璃窗的节能及应用实例[J].民营科技,2009,(6):207.
[3]刘晓菲,王小平.透明导电薄膜的研究进展[J].中国激光杂志社,2012,49(3):1~2.
[4]Petukhov I A,Parshina L S,et al.Transport Properties of Thin SnO2:Sb Films Grown by Pulsed Laser Deposition[J].Neorganicheskie Materialy,2013,49(11):1211~1215.
[5]贾绍辉,张淮凌,等.表层氮化硅掺氧对单银高透Low-E性能的改善[J].材料科学与工程学报,2013,31(6):799~802.
[6]李铭,高倩,韩高荣,等.退火处理对SnO2:F薄膜光电性能的影响[J].材料科学与工程学报,2012,30(1):132~135.
[7]林明贤.玻璃基板上复合功能薄膜的制备、结构及性能研究[D]浙江大学硕士学位论文,韩高荣,杭州,浙江大学,2007.
[8]段钢锋.兼具低辐射和阳光控制功能的TiN节能薄膜的制备和性能研究[D].浙江大学硕士学位论文,赵高凌,杭州,2010.
[9]邢帅,刘钟馨,姜宏,等.常压CVD法制备Sb掺杂SnO2薄膜的性能研究[J].材料导报,2015,29(4):19~24.
[10]G.Frank,E.Kostlin,H Kostlin.Transparent Heat-reflecting Coatings Based on Highly Doped Semiconductors[J].Thin Solid Films,1981,77:107~117.
[11]黄水平,王利.在线Low-E玻璃光学特性机理及其功能层光学常数的确定[J].光学仪器,2006,28(4):129~132.
[12]B.Thangaraju.Structural and Electrical Studies on Gighly Conducting Spray Deposited Fluorine and Antimony Doped SnO2Thin Films from SnCl2 Precursor[J].Journal of Physics and Chemistry of Solids,2002,420:71~78.
[13]E.J.J.Martin,M.Yan,M.Lane,et al.Properties of Multilayer Transparent Conducting Oxide Films[J].Thin Solid Films,2004,461(2):309~315.