旋涂法制备铈掺杂氧化锌薄膜的特性分析研究
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摘要
以旋涂法制备铈掺杂氧化锌薄膜,利用XRD、Uv-vis光谱、PL光谱、四点探针及磁性测试系统等手段分析铈掺杂与退火处理对薄膜的晶体结构、表面形貌、光学透射率、发光特性及电磁特性的影响。研究结果表明:所有薄膜皆为纤锌矿结构,具有很高的c轴取向性,无杂相产生,但铈掺杂会影响其结晶状况。所有薄膜表面皆呈多孔性纳米晶形态,掺铈后其表面则会出现五边形或六边形链状纹路,且具有很高的再现性。所有薄膜在可见光范围内的透射率皆可达80%以上,其能隙值则随铈掺杂量增加而减小。所有薄膜在紫外光区皆有一明显发射峰,但其强度随铈掺杂量增加而减弱;掺铈后的薄膜在绿光区与黄光区各有一明显发射峰,其强度则随铈掺杂量增加而增强。室温下薄膜的电传导机制为热激活型,而低温下则为变程跳跃型;所有薄膜皆具磁性,且其饱和磁矩随铈掺杂量增加而变大。
Ce doped ZnO films were prepared by spin coating method and the effects of Ce doping and annealing treatment on the crystal structure,surface morphology,optical transmittance,luminescence and electro-magnetic properties of the films were analyzed by XRD,Uv-vis spectra,PL spectra,four-point probe and magnetic testing system.The results showed that all films were wurtzite structure,with high c-axis orientation and no impurity phase,but Ce doping will affect their crystallization.All the surfaces of films were in porous nanocrystalline form,pentagonal or hexagonal chain-like grains appeared on the surfaces of the films after Ce doping and had high reproducibility.The transmittance of all films in the visible range could reach more than 80% and the energy gap decreased with Ce doping amount.All films had an obvious emission peak in the ultraviolet region,but their intensity decreased with Ce doping amount.Ce doped films had an obvious emission peak in the green and yellow regions respectively and their intensity increased with Ce doping amount.The electrical conduction mechanism of the films was thermally activated type at room temperature,while it was variable range hopping at low temperature.All films were magnetic and the saturation magnetization increased with Ce doping amount.
Ce doped ZnO films were prepared by spin coating method and the effects of Ce doping and annealing treatment on the crystal structure,surface morphology,optical transmittance,luminescence and electro-magnetic properties of the films were analyzed by XRD,Uv-vis spectra,PL spectra,four-point probe and magnetic testing system.The results showed that all films were wurtzite structure,with high c-axis orientation and no impurity phase,but Ce doping will affect their crystallization.All the surfaces of films were in porous nanocrystalline form,pentagonal or hexagonal chain-like grains appeared on the surfaces of the films after Ce doping and had high reproducibility.The transmittance of all films in the visible range could reach more than 80% and the energy gap decreased with Ce doping amount.All films had an obvious emission peak in the ultraviolet region,but their intensity decreased with Ce doping amount.Ce doped films had an obvious emission peak in the green and yellow regions respectively and their intensity increased with Ce doping amount.The electrical conduction mechanism of the films was thermally activated type at room temperature,while it was variable range hopping at low temperature.All films were magnetic and the saturation magnetization increased with Ce doping amount.
引文
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[13] Dumont J A,Mugumaoderha M C,Ghijsen J,et al.Thermally activated processes at the Co/ZnO interface elucidated using high energy X-rays[J].Journal of Physical Chemistry C,2011,115(15):7411-7418.
[14] Lin T T,Young S L,Kung C Y,et al.Variable-range hopping and thermal activation conduction of Y-doped ZnO nanocrystalline films[J].IEEE Transactions on Nanotechnology,2014,13(3):425-430.
[15] Zhang L,Liu G,Tang Z,et al.Scaling of Efros-Shklovskii variable range hopping conduction in ZnO:Cd thin films by sol-gel[J].Physica B Condensed Matter,2014,451(451):73-75.
[2] Cho S,Jung S H,Lee K H.Morphology-controlled growth of ZnO nanostructures using microwave irradiation:from basic to complex structures[J].Journal of Physical Chemistry C,2017,112(33):12769-12776.
[3]娄本浊.AlxZn1-xO纳米颗粒的光电特性研究[J].粉末冶金工业,2013,23(6):6-11.
[4]贺晋娟,程文娟,龚恒翔.锶掺杂氧化锌薄膜的制备及其可见光催化性能研究[J].无机盐工业,2017,49(7):39-43.
[5]季德春,谢骏,胡辉.镁与锂共掺杂氧化锌纳米薄膜的结构与特性研究[J].无机盐工业,2017,49(7):30-34.
[6] Schwegler V,Kirchner C,Seyboth M,et al.GaN/SiC quasi-substrates for GaN-based LEDs[J].Physica Status Solidi,2015,176(1):99-102.
[7] Young S J,Yang C C,Lai L T.Review-growth of Al-,Ga-,and Indoped ZnO nanostructures via a low-temperature process and their application to field emission devices and ultraviolet photosensors[J].Journal of the Electrochemical Society,2017,164(5):B3013-B3028.
[8]秦旭磊,李雪健,刘春阳,等.离轴倾角磁控溅射生长氧化锌薄膜及其物性研究[J].长春理工大学学报:自然科学版,2016,39(5):40-44.
[9]杨志怀,张云鹏,许强,等.用GGA+U法研究稀土掺杂对Zn O电子结构磁性和光学性质的影响[J].光子学报,2017,46(9):22-31.
[10]张继德,刘成有,辛春雨,等.磁控溅射ZnO薄膜的三阶非线性光学特性[J].吉林大学学报:理学版,2017,55(1):145-149.
[11]赵颖,汤洋.铟掺杂调控氧化锌纳米柱的密度与光学带隙[J].硅酸盐学报,2017,45(10):1439-1445.
[12]郭学海,潘国峰,李祥州,等.Al2O3掺杂ZnO基高选择性丙酮气体传感器[J].硅酸盐学报,2017,45(1):106-112.
[13] Dumont J A,Mugumaoderha M C,Ghijsen J,et al.Thermally activated processes at the Co/ZnO interface elucidated using high energy X-rays[J].Journal of Physical Chemistry C,2011,115(15):7411-7418.
[14] Lin T T,Young S L,Kung C Y,et al.Variable-range hopping and thermal activation conduction of Y-doped ZnO nanocrystalline films[J].IEEE Transactions on Nanotechnology,2014,13(3):425-430.
[15] Zhang L,Liu G,Tang Z,et al.Scaling of Efros-Shklovskii variable range hopping conduction in ZnO:Cd thin films by sol-gel[J].Physica B Condensed Matter,2014,451(451):73-75.